PDTC123JK datasheet, PDF - EEWORLD Datasheet

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PDTC123JK: DescriptionNPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM; CategoryDiscrete semiconductor The transistor; File Size98KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PDTC123JK Overview

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

PDTC123JK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC, SC-59A, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT IN BIAS RESISTANCE RATIO IS 21
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

PDTC123J series

NPN resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 47 kΩ

Product data sheet

Supersedes data of 2003 Apr 10

2004 Aug 13

PDTC123JK Related Products

	PDTC123JK	PDTC123J	PDTC123JE	PDTC123JEF	PDTC123JM	PDTC123JS	PDTC123JT	PDTC123JU
Description	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistor	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	NXP	-	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	SOT-23	-	SC-75	SC-89	SC-101	TO-92	SOT-23	SC-70
package instruction	PLASTIC, SC-59A, 3 PIN	-	PLASTIC, SC-75, 3 PIN	PLASTIC, SC-89, 3 PIN	1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3	3	3	3	3	3
Reach Compliance Code	unknown	-	compliant	unknown	compliant	unknown	compliant	compliant
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	-	N	N	N	N	N	N
Other features	BUILT IN BIAS RESISTANCE RATIO IS 21	-	BUILT IN BIAS RESISTANCE RATIO IS 21	BUILT IN BIAS RESISTANCE RATIO IS 21	BUILT IN BIAS RESISTANCE RATIO IS 21	-	BUILT IN BIAS RESISTANCE RATIO IS 21	BUILT IN BIAS RESISTANCE RATIO IS 21
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	-	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V	-	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	-	100	100	100	-	100	100
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-F3	R-PBCC-N3	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	-	e3	e3	e3	-	e3	e3
Number of components	1	-	1	1	1	-	1	1
Number of terminals	3	-	3	3	3	-	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	CHIP CARRIER	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	NOT SPECIFIED	260	-	260	260
Polarity/channel type	NPN	-	NPN	NPN	NPN	-	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	-	0.15 W	0.25 W	0.25 W	-	0.25 W	0.2 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	-	YES	YES
Terminal surface	Matte Tin (Sn)	-	Tin (Sn)	Tin (Sn)	Tin (Sn)	-	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	-	GULL WING	FLAT	NO LEAD	-	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	BOTTOM	-	DUAL	DUAL
Maximum time at peak reflow temperature	40	-	30	NOT SPECIFIED	30	-	30	30
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	-	SILICON	SILICON
Base Number Matches	1	-	1	1	1	1	1	1

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