BLC8G27LS-210PV
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2600 to 2700
I
Dq
(mA)
1730
V
DS
(V)
28
P
L(AV)
(W)
65
G
p
(dB)
17
D
(%)
30
ACPR
5M
(dBc)
29
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
NXP Semiconductors
BLC8G27LS-210PV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
9
[1]
Pinning
Simplified outline
Graphic symbol
Description
drain2
drain1
gate1
gate2
source
video decoupling drain1
n.c.
n.c.
video decoupling drain2
Connected to flange.
[1]
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLC8G27LS-210PV
-
air cavity plastic earless flanged package; 8 leads
Version
SOT1251-3
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 65 W
Typ
0.22
Unit
K/W
thermal resistance from junction to case
Symbol Parameter
BLC8G27LS-210PV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 9 February 2015
2 of 15
NXP Semiconductors
BLC8G27LS-210PV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section, unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1.44 mA
V
DS
= 10 V; I
D
= 144 mA
V
DS
= 28 V; I
D
= 865 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.2 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.4 A
Min
65
1.5
1.6
-
-
-
-
-
Typ
-
1.9
2
-
26.9
-
11.2
0.10
Max Unit
-
2.3
2.4
2.8
-
280
-
-
V
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f
1
= 2602.5 MHz; f
2
= 2607.5 MHz; f
3
= 2692.5 MHz; f
4
= 2697.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1730 mA; T
case
= 25
C; unless otherwise specified; in a water
cooled class-AB test circuit.
Symbol
G
p
D
RL
in
Parameter
power gain
drain efficiency
input return loss
Conditions
P
L(AV)
= 65 W
P
L(AV)
= 65 W
P
L(AV)
= 65 W
P
L(AV)
= 65 W
Min
15.8
27
-
-
Typ
17
30
13
29
Max
-
-
8
26
Unit
dB
%
dB
dBc
ACPR
5M
adjacent channel power ratio (5 MHz)
7. Test information
7.1 Ruggedness in class-AB operation
The BLC8G27LS-210PV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1730 mA; P
L
= 200 W (CW); f = 2600 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data per section; I
Dq
= 865 mA; V
DS
= 28 V.
f
(MHz)
2500
2600
2700
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S
[1]
()
2.58
j5.80
3.40
j6.30
6.35
j6.45
Z
L[1]
()
1.60
j4.32
1.65
j4.44
1.77
j4.75
BLC8G27LS-210PV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 9 February 2015
3 of 15
NXP Semiconductors
BLC8G27LS-210PV
Power LDMOS transistor
Fig 1.
Definition of transistor impedance
7.3 VBW in a class-AB operation
The BLC8G27LS-210PV shows 150 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 2.6 GHz to 2.7 GHz band
at V
DS
= 28 V and I
Dq
= 1.73 A.
V
DS
= 28 V; I
Dq
= 1730 mA.
(1) low
(2) high
Fig 2.
VBW capacity in class-AB test circuit
BLC8G27LS-210PV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 9 February 2015
4 of 15
NXP Semiconductors
BLC8G27LS-210PV
Power LDMOS transistor
7.4 Test circuit
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See
Table 9
for a list of
components.
Fig 3.
Component layout
Table 9.
List of components
See
Figure 3
for component layout.
Component
C1, C2
C4, C7
C5, C6
C9, C12, C16, C19
C11, C17
C13, C15
R1, R2
R3
R4
[1]
[2]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
chip resistor
chip resistor
Value
1.6 pF
24 pF
100 nF
1
F
470
F,
50 V
220 nF
> 470
F,
63 V
4.7
,
1 % tolerance
10
,
1 % tolerance
100
,
1 % tolerance
[1]
[1]
[2]
[2]
[2]
[2]
Remarks
ATC 800B
ATC 800B
Murata
Murata
Murata
Murata
SMD 0805
SMD 0805
SMD 2010
C3, C8, C10, C14, C18 multilayer ceramic chip capacitor
American Technical Ceramics type 800B or capacitor of same quality.
Murata or capacitor of same quality.
BLC8G27LS-210PV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 9 February 2015
5 of 15
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