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PMBT4401

Description
600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size64KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMBT4401 Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PMBT4401 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)35 ns
VCEsat-Max0.75 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT4401
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
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