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PMD2001D

Description
600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size164KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMD2001D Overview

600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

PMD2001D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSOP
package instructionPLASTIC, SC-74, TSOP-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationCOMMON BASE AND COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)5 ns
Maximum opening time (tons)6 ns
PMD2001D
MOSFET driver
Rev. 02 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Switching transistors in push-pull configuration
Application-optimized pinout
Space-saving solution
Internal connections to minimize layout effort
Reduces component count
1.3 Applications
I
MOSFET driver
I
Power bipolar transistor driver
I
Output current booster for operational amplifier
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
40
0.6
1
Unit
V
A
A
Per transistor; for the PNP transistor with negative polarity

PMD2001D Related Products

PMD2001D PMD2001D,115
Description 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to
Parts packaging code TSOP TSOP
package instruction PLASTIC, SC-74, TSOP-6 PLASTIC, SC-74, TSOP-6
Contacts 6 6
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 40 V
Configuration COMMON BASE AND COMMON EMITTER, 2 ELEMENTS COMMON BASE AND COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 5 ns 5 ns
Maximum opening time (tons) 6 ns 6 ns
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