PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD
packages.
Table 1.
Product overview
Package
NXP
PMEG1020EH
PMEG1020EJ
SOD123F
SOD323F
JEITA
-
SC-90
single diode
single diode
Configuration
Type number
1.2 Features
Forward current:
≤
2 A
Reverse voltage:
≤
10 V
Ultra low forward voltage
Small and flat lead SMD plastic packages
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 2 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
350
Max
2
10
460
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG1020EH
PMEG1020EJ
-
SC-90
Description
plastic surface mounted package; 2 leads
plastic surface mounted package; 2 leads
Version
SOD123F
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
A8
CB
Type number
PMEG1020EH
PMEG1020EJ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
PMEG1020EH
PMEG1020EJ
T
j
junction temperature
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.5
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
Conditions
Min
-
-
-
-
Max
10
2
7
9
Unit
V
A
A
A
-
-
-
-
375
830
360
830
150
mW
mW
mW
mW
°C
PMEG1020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
2 of 9
NXP Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
amb
T
stg
[1]
[2]
Parameter
ambient temperature
storage temperature
Conditions
Min
−65
−65
Max
+150
+150
Unit
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
PMEG1020EH
PMEG1020EJ
R
th(j-sp)
thermal resistance from junction
to solder point
PMEG1020EH
PMEG1020EJ
[1]
[2]
Conditions
in free air
[1][2]
[2][3]
[1][2]
[2][3]
[4]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
-
-
-
-
60
55
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
[3]
[4]
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.01 A
I
F
= 0.1 A
I
F
= 1 A
I
F
= 2 A
I
R
reverse current
V
R
= 5 V
V
R
= 8 V
V
R
= 10 V
C
d
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Typ
100
170
280
350
0.7
1
1.2
40
Max
130
200
350
460
2
2.5
3
50
Unit
mV
mV
mV
mV
mA
mA
mA
pF
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 5 V; f = 1 MHz
PMEG1020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
3 of 9
NXP Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
006aaa008
10
5
I
R
(μA)
10
4
(1)
006aaa009
10
3
(2)
10
2
10
2
(1)
(2)
(3)
10
10
(3)
1
0
100
200
300
V
F
(mV)
400
1
0
5
V
R
(V)
10
(1) T
amb
= 85
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
(1) T
amb
= 85
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
140
C
d
(pF)
100
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa010
60
20
0
2
4
6
8
V
R
(V)
10
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG1020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
4 of 9
NXP Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
8. Package outline
1.7
1.5
1
0.55
0.35
3.6
3.4
2.7
2.5
2.7
2.3
1.8
1.6
1.2
1.0
1.35
1.15
1
0.5
0.3
0.80
0.65
2
0.70
0.55
Dimensions in mm
0.25
0.10
04-11-29
Dimensions in mm
2
0.40
0.25
0.25
0.10
04-09-13
Fig 4.
Package outline SOD123F
Fig 5.
Package outline SOD323F (SC-90)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PMEG1020EH
PMEG1020EJ
[1]
Package
SOD123F
SOD323F
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-115
10000
-135
For further information and the availability of packing methods, see
Section 13.
PMEG1020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 15 January 2010
5 of 9
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