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RJK0453DPB

Description
55 A, 40 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size78KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

RJK0453DPB Overview

55 A, 40 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET

RJK0453DPB Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage40 V
Processing package descriptionHALOGEN AND 铅 FREE, SC-100, LFPAK-4
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNickel Palladium
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current55 A
Maximum drain on-resistance0.0032 ohm
Maximum leakage current pulse220 A
Preliminary
Datasheet
RJK0453DPB
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
R07DS0075EJ0102
(Previous: REJ03G1762-0101)
Rev.1.02
Jul 30, 2010
Low on-resistance
R
DS(on)
= 1.9 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-C
Tch
Tstg
Ratings
40
20
55
220
55
27.5
60.5
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V
GS(off)
) which characteristics has been improved.
R07DS0075EJ0102 Rev.1.02
Jul 30, 2010
Page 1 of 6

RJK0453DPB Related Products

RJK0453DPB RJK0453DPB-00-J5
Description 55 A, 40 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET 55 A, 40 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 4 4
Minimum breakdown voltage 40 V 40 V
Processing package description HALOGEN AND 铅 FREE, SC-100, LFPAK-4 HALOGEN AND 铅 FREE, SC-100, LFPAK-4
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating Nickel Palladium Nickel Palladium
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply
Maximum leakage current 55 A 55 A
Maximum drain on-resistance 0.0032 ohm 0.0032 ohm
Maximum leakage current pulse 220 A 220 A
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