Si4394DY
New Product
Vishay Siliconix
N-Channel Reduced Q
dg
, Fast Switching WFETt
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.00825 @ V
GS
= 10 V
0.00975 @ V
GS
= 4.5 V
I
D
(A)
15
14
D
Extremely Low Q
gd
WFETt Technology for
Switching Losses
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
APPLICATIONS
D
High-Side DC/DC Conversion
−
Notebook
−
Server
D
Synchronous Rectification
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
Ordering Information: Si4394DY—E3 (Lead Free)
Si4394DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanch Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L= 0.1 mH
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
i
AS
P
D
T
J
, T
stg
10 secs
30
"12
15
12
50
2.7
45
2.7
1.9
Steady State
Unit
V
10
8
A
1.3
1.4
0.9
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
32
68
16
Maximum
42
90
20
Unit
_C/W
C/W
1
Si4394DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 14 A
V
DS
= 15 V, I
D
= 15 A
I
S
= 2.9 A, V
GS
= 0 V
30
0.0066
0.0077
65
0.73
1.1
0.00825
0.00975
0.6
1.8
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, Rg = 6
W
f = 1 MHz
0.8
V
DS
= 15 V, V
GS =
4.5 V, I
D
= 15 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1900
530
120
12.5
3.9
2.1
1.2
13
8
48
13
36
1.8
20
13
75
20
55
ns
W
nC
pF
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
50
I
D
−
Drain Current (A)
40
30
20
10
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
V
GS
= 10 thru 3 V
60
50
I
D
−
Drain Current (A)
40
30
20
10
0
0.0
Transfer Characteristics
T
C
= 125_C
25_C
−55_C
0.5
1.0
1.5
2.0
2.5
3.0
2V
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
2
Si4394DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.015
r
DS(on)
−
On-Resistance (
W
)
2200
C
iss
C
−
Capacitance (pF)
0.012
1760
Vishay Siliconix
Capacitance
0.009
V
GS
= 4.5 V
1320
0.006
V
GS
= 10 V
880
C
oss
440
C
rss
0.003
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
−
Gate-to-Source Voltage (V)
5
4
3
2
1
0
0
3
6
9
12
15
18
Q
g
−
Total Gate Charge (nC)
V
DS
= 15 V
I
D
= 15 A
r
DS(on)
−
On-Resiistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 15 A
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.040
On-Resistance vs. Gate-to-Source Voltage
10
r
DS(on)
−
On-Resistance (
W
)
I
S
−
Source Current (A)
T
J
= 150_C
0.032
0.024
I
D
= 15 A
1
0.016
T
J
= 25_C
0.008
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
www.vishay.com
3
Si4394DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power
0.2
V
GS(th)
Variance (V)
160
I
D
= 250
mA
Power (W)
120
−0.0
−0.2
80
−0.4
40
−0.6
−50
−25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
−
Temperature (_C)
100
Limited by r
DS(on)
10
I
D
−
Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms
10 ms
1
100 ms
1s
T
C
= 25_C
Single Pulse
10 s
dc
0.1
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
Si4394DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
0.01
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
