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SI4394DY

Description
N-Channel Reduced Qdg, Fast Switching WFET
File Size67KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI4394DY Overview

N-Channel Reduced Qdg, Fast Switching WFET

Si4394DY
New Product
Vishay Siliconix
N-Channel Reduced Q
dg
, Fast Switching WFETt
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.00825 @ V
GS
= 10 V
0.00975 @ V
GS
= 4.5 V
I
D
(A)
15
14
D
Extremely Low Q
gd
WFETt Technology for
Switching Losses
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
APPLICATIONS
D
High-Side DC/DC Conversion
Notebook
Server
D
Synchronous Rectification
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
Ordering Information: Si4394DY—E3 (Lead Free)
Si4394DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanch Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L= 0.1 mH
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
i
AS
P
D
T
J
, T
stg
10 secs
30
"12
15
12
50
2.7
45
2.7
1.9
Steady State
Unit
V
10
8
A
1.3
1.4
0.9
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
32
68
16
Maximum
42
90
20
Unit
_C/W
C/W
1

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