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SI6965DQ

Description
P-Channel 2.5-V (G-S) Battery Switch
CategoryDiscrete semiconductor    The transistor   
File Size51KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI6965DQ Overview

P-Channel 2.5-V (G-S) Battery Switch

SI6965DQ Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTSSOP
package instruction,
Contacts8
Reach Compliance Codeunknow
Maximum drain current (Abs) (ID)5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Si6965DQ
Vishay Siliconix
P-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
0.035 @ V
GS
= –4.5 V
0.060 @ V
GS
= –2.5 V
I
D
(A)
"5.0
"3.9
S
1
S
2
TSSOP-8
D
S
1
S
1
G
1
1
2
3
4
Top View
D
P-Channel MOSFET
D
P-Channel MOSFET
D
8
D
S
2
S
2
G
2
G
1
G
2
Si6965DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–20
"12
"5.0
"4.0
"30
–1.5
1.5
0.96
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
v
10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70798
S-56943—Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Typical
Maximum
83
Unit
_C/W
85
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