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SIHF730ASTR-E3

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size214KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SIHF730ASTR-E3 Overview

Power MOSFET

SIHF730ASTR-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) ()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
22
5.8
9.3
Single
D
FEATURES
400
1.0
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
G
G
D
S
D
S
S
N-Channel MOSFET
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Sspeed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF730AS-GE3
IRF730ASPbF
SiHF730AS-E3
D
2
PAK (TO-263)
SiHF730ASTRL-GE3
a
IRF730ASTRLPbF
a
SiHF730ASTL-E3
a
D
2
PAK (TO-263)
SiHF730ASTRR-GE3
a
IRF730ASTRRPbF
a
SiHF730ASTR-E3
a
I
2
PAK (TO-262)
SiHF730AL-GE3
IRF730ALPbF
SiHF730AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
400
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
I
DM
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
E
AS
a
I
AR
Avalanche Current
a
Repetiitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
c, e
dV/dt
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 19 mH, R
g
= 25
,
I
AS
= 5.5 A (see fig. 12).
c. I
SD
5.5 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF730A, SiHF730A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91046
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHF730ASTR-E3 Related Products

SIHF730ASTR-E3 IRF730AL SIHF730AL SIHF730AS SIHF730AS-E3 SIHF730ASTL SIHF730ASTL-E3 IRF730ASTRR
Description Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET MOSFET N-CH 400V 5.5A D2PAK
Is it lead-free? Lead free Contains lead - Contains lead Lead free Contains lead Lead free Contains lead
Is it Rohs certified? conform to incompatible - incompatible conform to incompatible conform to incompatible
Parts packaging code D2PAK TO-262AA - D2PAK D2PAK D2PAK D2PAK -
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 - 4 4 4 4 3
Reach Compliance Code unknow compli - unknow unknow unknow unknow unknown
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ - 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ
Shell connection DRAIN DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V - 400 V 400 V 400 V 400 V 400 V
Maximum drain current (Abs) (ID) 5.5 A 5.5 A - 5.5 A 5.5 A 5.5 A 5.5 A 5.5 A
Maximum drain current (ID) 5.5 A 5.5 A - 5.5 A 5.5 A 5.5 A 5.5 A 5.5 A
Maximum drain-source on-resistance 1 Ω 1 Ω - 1 Ω 1 Ω 1 Ω 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA - TO-263AB TO-263AB TO-263AB TO-263AB -
JESD-30 code R-PSSO-G2 R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 - - e0 e3 e0 e3 -
Humidity sensitivity level 1 1 - - 1 - 1 1
Number of components 1 1 - 1 1 1 1 1
Number of terminals 2 3 - 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 225 - 240 260 240 260 225
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W - 74 W 74 W 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 22 A 22 A - 22 A 22 A 22 A 22 A 22 A
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO - YES YES YES YES YES
Terminal surface Matte Tin (Sn) - - Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) -
Terminal form GULL WING THROUGH-HOLE - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 NOT SPECIFIED - 30 40 30 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 - 1 1 - - 1
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