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SIHF730AS

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size214KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHF730AS Overview

Power MOSFET

SIHF730AS Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) ()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
22
5.8
9.3
Single
D
FEATURES
400
1.0
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
G
G
D
S
D
S
S
N-Channel MOSFET
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Sspeed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF730AS-GE3
IRF730ASPbF
SiHF730AS-E3
D
2
PAK (TO-263)
SiHF730ASTRL-GE3
a
IRF730ASTRLPbF
a
SiHF730ASTL-E3
a
D
2
PAK (TO-263)
SiHF730ASTRR-GE3
a
IRF730ASTRRPbF
a
SiHF730ASTR-E3
a
I
2
PAK (TO-262)
SiHF730AL-GE3
IRF730ALPbF
SiHF730AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
400
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
I
DM
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
E
AS
a
I
AR
Avalanche Current
a
Repetiitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
c, e
dV/dt
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 19 mH, R
g
= 25
,
I
AS
= 5.5 A (see fig. 12).
c. I
SD
5.5 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF730A, SiHF730A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91046
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHF730AS Related Products

SIHF730AS IRF730AL SIHF730AL SIHF730AS-E3 SIHF730ASTL SIHF730ASTL-E3 SIHF730ASTR-E3 IRF730ASTRR
Description Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET MOSFET N-CH 400V 5.5A D2PAK
Is it lead-free? Contains lead Contains lead - Lead free Contains lead Lead free Lead free Contains lead
Is it Rohs certified? incompatible incompatible - conform to incompatible conform to conform to incompatible
Parts packaging code D2PAK TO-262AA - D2PAK D2PAK D2PAK D2PAK -
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 - 4 4 4 4 3
Reach Compliance Code unknow compli - unknow unknow unknow unknow unknown
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ - 290 mJ 290 mJ 290 mJ 290 mJ 290 mJ
Shell connection DRAIN DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V - 400 V 400 V 400 V 400 V 400 V
Maximum drain current (Abs) (ID) 5.5 A 5.5 A - 5.5 A 5.5 A 5.5 A 5.5 A 5.5 A
Maximum drain current (ID) 5.5 A 5.5 A - 5.5 A 5.5 A 5.5 A 5.5 A 5.5 A
Maximum drain-source on-resistance 1 Ω 1 Ω - 1 Ω 1 Ω 1 Ω 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA - TO-263AB TO-263AB TO-263AB TO-263AB -
JESD-30 code R-PSSO-G2 R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 - - e3 e0 e3 e3 -
Number of components 1 1 - 1 1 1 1 1
Number of terminals 2 3 - 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 225 - 260 240 260 260 225
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W - 74 W 74 W 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 22 A 22 A - 22 A 22 A 22 A 22 A 22 A
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO - YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) - - Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) -
Terminal form GULL WING THROUGH-HOLE - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED - 40 30 40 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 - 1 - - 1 1
Humidity sensitivity level - 1 - 1 - 1 1 1
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