SIHF840LCS-E3 datasheet, PDF - EEWORLD Datasheet

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SIHF840LCS-E3: Description8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size211KB，10 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHF840LCS-E3 Overview

8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

SIHF840LCS-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	510 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

Single

FEATURES

500

0.85

•

Halogen-free According to IEC 61249-2-21

Definition

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

Rating

• Reduced C

iss

, C

oss

, C

rss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

PAK

(TO-262)

PAK (TO-263)

N-Channel MOSFET

This new series of low charge Power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that characterize Power

MOSFETs offer the designer a new power transistor

standard for switching applications.

PAK (TO-262)

SiHF840LCL-GE3

IRF840LCLPbF

SiHF840LCL-E3

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHF840LCS-GE3

IRF840LCSPbF

SiHF840LCS-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

= 25 °C

Current

a, e

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

for 10 s

LIMIT

500

± 30

8.0

5.1

1.0

510

8.0

125

3.1

3.5

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 14 mH, R

= 25

,

= 8.0 A (see fig. 12).

c. I



8.0 A, dI/dt



100 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRF840LC, SiHF840LC data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91068

S11-1050-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHF840LCS-E3 Related Products

	SIHF840LCS-E3	IRF840LCSTRR	SIHF840LCL-E3	SIHF840LCST	SIHF840LCL	SIHF840LCS
Description	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	incompatible	incompatible
Parts packaging code	D2PAK	TO-220AB	TO-262AA	D2PAK	TO-262AA	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, S-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	4	3	3	3	3	4
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V	500 V	500 V
Maximum drain current (Abs) (ID)	8 A	8 A	8 A	8 A	8 A	8 A
Maximum drain current (ID)	8 A	8 A	8 A	8 A	8 A	8 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-262AA	TO-263AB	TO-262AA	TO-263AB
JESD-30 code	R-PSSO-G2	S-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e0	e3	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	2	2	3	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	240	240	240
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	125 W	125 W	125 W	125 W
Maximum pulsed drain current (IDM)	28 A	28 A	28 A	28 A	28 A	28 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	YES	NO	YES
Terminal surface	Matte Tin (Sn)	TIN LEAD	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED	40	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	-	Lead free	Contains lead	Contains lead	Contains lead
Maker	Vishay	Vishay	-	Vishay	Vishay	Vishay

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