IS61QDP2B44M18A1-400M3L datasheet, PDF

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IS61QDP2B44M18A1-400M3L: DescriptionQDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165; Categorystorage storage; File Size575KB，35 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS61QDP2B44M18A1-400M3L Overview

QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

IS61QDP2B44M18A1-400M3L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	LBGA, BGA165,11X15,40
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Maximum clock frequency (fCLK)	400 MHz
I/O type	SEPARATE
JESD-30 code	R-PBGA-B165
length	17 mm
memory density	75497472 bit
Memory IC Type	QDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.36 A
Minimum standby current	1.7 V
Maximum slew rate	1.15 mA
Maximum supply voltage (Vsup)	1.89 V
Minimum supply voltage (Vsup)	1.71 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
width	15 mm

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IS61QDP2B44M18A/A1/A2

IS61QDP2B42M36A/A1/A2

4Mx18, 2Mx36

72Mb QUAD-P (Burst 4) SYNCHRONOUS SRAM

(2.0 Cycle Read Latency)

FEATURES



2Mx36 and 4Mx18 configuration available.

On-chip delay-locked loop (DLL) for wide data valid

window.

Separate read and write ports with concurrent read

and write operations.

Synchronous pipeline read with late write operation.

Double data rate (DDR) interface for read and write

input ports.

2.0 cycle read latency.

Fixed 4-bit burst for read and write operations.

Clock stop support.

Two input clocks (K and K#) for address and control

registering at rising edges only.

Two echo clocks (CQ and CQ#) that are delivered

simultaneously with data.

Data Valid Pin (QVLD).

+1.8V core power supply and 1.5, 1.8V VDDQ, used

with 0.75, 0.9V VREF.

HSTL input and output levels.

Registered addresses, write and read controls, byte

writes, data in, and data outputs.

Full data coherency.

Boundary scan using limited set of JTAG 1149.1

functions.

Byte write capability.

Fine ball grid array (FBGA) package:

13mmx15mm and 15mmx17mm body size

165-ball (11 x 15) array

Programmable impedance output drivers via 5x

user-supplied precision resistor.

ODT(On-Die Termination) feature is supported

optionally on Input clocks, Data input, and Control

signals.

ADVANCED INFORMATION

AUGUST 2011

DESCRIPTION

The 72Mb IS61QDP2B42M36A/A1/A2 and

IS61QDP2B44M18A/A1/A2 are synchronous, high-

performance CMOS static random access memory (SRAM)

devices. These SRAMs have separate I/Os, eliminating the

need for high-speed bus turnaround. The rising edge of K

clock initiates the read/write operation, and all internal

operations are self-timed. Refer to the

Timing Reference

Diagram for Truth Table

for a description of the basic

operations of these QUAD-P (Burst of 4) SRAMs. Read and

write addresses are registered on alternating rising edges of

the K clock. Reads and writes are performed in double data

rate.

The following are registered internally on the rising edge of

the K clock:



Read/write address



Read enable



Write enable



Byte writes for burst addresses 1 and 3



Data-in for burst addresses 1 and 3

The following are registered on the rising edge of the K#

clock:



Byte writes for burst addresses 2 and 4



Data-in for burst addresses 2 and 4

Byte writes can change with the corresponding data-in to

enable or disable writes on a per-byte basis. An internal write

buffer enables the data-ins to be registered one cycle after

the write address. The first data-in burst is clocked one cycle

later than the write command signal, and the second burst is

timed to the following rising edge of the K# clock. Two full

clock cycles are required to complete a write operation.

During the burst read operation, the data-outs from the first

and third bursts are updated from output registers of the third

and fourth rising edges of the K clock (starting 2.0 cycles

later after read command). The data-outs from the second

and fourth bursts are updated with the third and fourth rising

edges of the K# clock where the read command receives at

the first rising edge of K. Two full clock cycles are required to

complete a read operation.

The device is operated with a single +1.8V power supply

and is compatible with HSTL I/O interfaces.



without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 00A

5/12/2010

IS61QDP2B44M18A/A1/A2

IS61QDP2B42M36A/A1/A2

Ball Description

Symbol

K, K#

Type

Input

Description

Input clock: This input clock pair registers address and control inputs on the rising edge of K, and

registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of

phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges.

These balls cannot remain VREF level.

Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous

data outputs and can be used as a data valid indication. These signals run freely and do not stop

when Q tri-states.

DLL disable and reset input : when low, this input causes the DLL to be bypassed and reset the

previous DLL information. When high, DLL will start operating and lock the frequency after tCK lock

time. The device behaves in 1.0 read latency mode when the DLL is turned off. In this mode, the

device can be operated at a frequency of up to 167 MHz.

Valid output indicator: The Q Valid indicates valid output data. QVLD is edge aligned with CQ and

CQ#.

Synchronous address inputs: These inputs are registered and must meet the setup and hold times

around the rising edge of K. These inputs are ignored when device is deselected.

Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K

and K# during WRITE operations. See BALL CONFIGURATION figures for ball site location of

individual signals.

The x18 device uses D0~D17. D18~D35 should be treated as NC pin.

The x36 device uses D0~D35.

Synchronous data outputs: Output data is synchronized to the respective C and C#, or to the

respective K and K# if C and /C are tied to high. This bus operates in response to R# commands.

See BALL CONFIGURATION figures for ball site location of individual signals.

The x18 device uses Q0~Q17. Q18~Q35 should be treated as NC pin.

The x36 device uses Q0~Q35.

Synchronous write: When low, this input causes the address inputs to be registered and a WRITE

cycle to be initiated. This input must meet setup and hold times around the rising edge of K.

Synchronous read: When low, this input causes the address inputs to be registered and a READ

cycle to be initiated. This input must meet setup and hold times around the rising edge of K.

Synchronous byte writes: When low, these inputs cause their respective byte to be registered and

written during WRITE cycles. These signals are sampled on the same edge as the corresponding

data and must meet setup and hold times around the rising edges of K and #K for each of the two

rising edges comprising the WRITE cycle. See Write Truth Table for signal to data relationship.

HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve system noise

margin. Provides a reference voltage for the HSTL input buffers.

Power supply: 1.8 V nominal. See DC Characteristics and Operating Conditions for range.

Power supply: Isolated output buffer supply. Nominally 1.5 V. See DC Characteristics and Operating

Conditions for range.

Ground

Output impedance matching input: This input is used to tune the device outputs to the system data

bus impedance. Q and CQ output impedance are set to 0.2xRQ, where RQ is a resistor from this ball

to ground. This ball can be connected directly to VDDQ, which enables the minimum impedance

mode. This ball cannot be connected directly to VSS or left unconnected.

In ODT (On Die Termination) enable devices, the ODT termination values tracks the value of RQ.

The ODT range is selected by ODT control input.

IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not connected if the JTAG function

is not used in the circuit.

IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG function is not

used in the circuit.

No connect: These signals should be left floating or connected to ground to improve package heat

dissipation.

ODT control; Refer to SRAM features for the details.

CQ, CQ#

Output

Doff#

QVLD

Input

Output

Input

D0 - Dn

Input

Q0 - Qn

Output

REF

DDQ

Input

supply

Input

TMS, TDI, TCK

TDO

ODT

Input

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 00A

5/12/2010

IS61QDP2B44M18A/A1/A2

IS61QDP2B42M36A/A1/A2

The data-in provided for writing is initially kept in write buffers. The information in these buffers is written into the array

on the third write cycle. A read cycle to the last two write addresses produces data from the write buffers. The SRAM

maintains data coherency.

During a write, the byte writes independently control which byte of any of the four burst addresses is written (see

X18/X36 Write Truth Tables

and

Timing Reference Diagram for Truth Table).

Whenever a write is disabled (W# is high at the rising edge of K), data is not written into the memory.

RQ Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V

to enable the SRAM to adjust

its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the

SRAM. For example, an RQ of 250Ω results in a driver impedance of 50Ω. The allowable range of RQ to guarantee

impedance matching is between 175Ω and 350Ω with V

DDQ

=1.5V. The RQ resistor should be placed less than two

inches away from the ZQ ball on the SRAM module. The capacitance of the loaded ZQ trace must be less than 7.5pF.

The ZQ pin can also be directly connected to V

DDQ

to obtain a minimum impedance setting. ZQ must never be

connected to V

Programmable Impedance and Power-Up Requirements

Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in

supply voltage and temperature. At power-up, the driver impedance is in the middle of allowable impedances values.

The final impedance value is achieved within 1024 clock cycles.

Depth Expansion

Separate input and output ports enable easy depth expansion, as each port can be selected and deselected

independently. Read and write operations can occur simultaneously without affecting each other. Also, all pending

read and write transactions are always completed prior to deselecting the corresponding port.

Valid Data Indicator (QVLD)

A data valid pin (QVLD) is available to assist in high-speed data output capture. This output signal is edge-aligned with

the echo clock and is asserted HIGH half a cycle before valid read data is available and asserted LOW half a cycle

before the final valid read data arrives.

Delay Lock Loop (DLL)

Delay Lock Loop (DLL) is a new system to align the output data coincident with clock rising or falling edge to enhance

the output valid timing characteristics. It is locked to the clock frequency and is constantly adjusted to match the clock

frequency. Therefore device can have stable output over the temperature and voltage variation.

DLL has a limitation of locking range and jitter adjustment which are specified as tKHKH and tKCvar respectively in the

AC timing characteristics. In order to turn this feature off, applying logic low to the Doff# pin will bypass this. In the DLL

off mode, the device behaves with 1.0 cycle latency and a longer access time which is known in DDR-I or old QUAD

mode.

The DLL can also be reset without power down by toggling Doff# pin low to high or stopping the input clocks K and K#

for a minimum of 30ns.(K and K# must be stayed either at higher than VIH or lower than VIL level. Remaining Vref is

not permitted.) DLL reset must be issued when power up or when clock frequency changes abruptly. After DLL being

reset, it gets locked after 2048 cycles of stable clock.

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 00A

5/12/2010

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