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SST39SF040

Description
128K X 8 FLASH 5V PROM, 55 ns, PQCC32
Categorystorage   
File Size281KB,28 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Download user manual Parametric Compare View All

SST39SF040 Overview

128K X 8 FLASH 5V PROM, 55 ns, PQCC32

SST39SF040 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals32
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage5 V
Minimum supply/operating voltage4.5 V
Maximum supply/operating voltage5.5 V
Processing package descriptionROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
ypeNOR TYPE
sub_categoryFlash Memories
ccess_time_max55 ns
command_user_interfaceYES
data_pollingYES
jesd_30_codeR-PQCC-J32
jesd_609_codee3
storage density1.05E6 bit
Memory IC typeFLASH
memory width8
moisture_sensitivity_levelNOT SPECIFIED
umber_of_sectors_size32
Number of digits131072 words
Number of digits128K
operating modeASYNCHRONOUS
organize128KX8
Packaging MaterialsPLASTIC/EPOXY
ckage_codeQCCJ
ckage_equivalence_codeLDCC32,.5X.6
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
serial parallelPARALLEL
eak_reflow_temperature__cel_260
wer_supplies__v_5
gramming_voltage__v_5
qualification_statusCOMMERCIAL
seated_height_max3.56 mm
sector_size__words_4K
standby_current_max1.00E-4 Amp
Maximum supply voltage0.0350 Amp
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingMATTE TIN
Terminal formJ BEND
Terminal spacing1.27 mm
Terminal locationQUAD
ime_peak_reflow_temperature_max__s_40
ggle_biYES
length13.97 mm
width11.43 mm
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose
Flash (MPF) devices manufactured with SST proprietary, high performance
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability compared with alternate
approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program
or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts
for x8 memories
Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Fast Erase and Byte-Program
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 10 mA (typical)
– Standby Current: 30 µA (typical)
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• Sector-Erase Capability
– Uniform 4 KByte sectors
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Fast Read Access Time:
– 55 ns
– 70 ns
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• All devices are RoHS compliant
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS25022B
04/13

SST39SF040 Related Products

SST39SF040 SST39SF010A SST39SF020A SST39SF020A-55-5I-WHE
Description 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
Number of functions 1 1 1 1
Number of terminals 32 32 32 32
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 °C
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 °C
memory width 8 8 8 8
organize 128KX8 128KX8 128KX8 256KX8
surface mount YES YES YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form J BEND J BEND J BEND GULL WING
Terminal location QUAD QUAD QUAD DUAL
length 13.97 mm 13.97 mm 13.97 mm 12.4 mm
width 11.43 mm 11.43 mm 11.43 mm 8 mm
Rated supply voltage 5 V 5 V 5 V -
Minimum supply/operating voltage 4.5 V 4.5 V 4.5 V -
Maximum supply/operating voltage 5.5 V 5.5 V 5.5 V -
Processing package description ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32 ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32 ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32 -
each_compli Yes Yes Yes -
EU RoHS regulations Yes Yes Yes -
China RoHS regulations Yes Yes Yes -
state Active Active Active -
ype NOR TYPE NOR TYPE NOR TYPE -
sub_category Flash Memories Flash Memories Flash Memories -
ccess_time_max 55 ns 55 ns 55 ns -
command_user_interface YES YES YES -
data_polling YES YES YES -
jesd_30_code R-PQCC-J32 R-PQCC-J32 R-PQCC-J32 -
jesd_609_code e3 e3 e3 -
storage density 1.05E6 bit 1.05E6 bit 1.05E6 bit -
Memory IC type FLASH FLASH FLASH -
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
umber_of_sectors_size 32 32 32 -
Number of digits 128K 128K 128K -
operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
ckage_code QCCJ QCCJ QCCJ -
ckage_equivalence_code LDCC32,.5X.6 LDCC32,.5X.6 LDCC32,.5X.6 -
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size CHIP CARRIER CHIP CARRIER CHIP CARRIER -
serial parallel PARALLEL PARALLEL PARALLEL -
eak_reflow_temperature__cel_ 260 260 260 -
wer_supplies__v_ 5 5 5 -
gramming_voltage__v_ 5 5 5 -
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL -
seated_height_max 3.56 mm 3.56 mm 3.56 mm -
sector_size__words_ 4K 4K 4K -
standby_current_max 1.00E-4 Amp 1.00E-4 Amp 1.00E-4 Amp -
Maximum supply voltage 0.0350 Amp 0.0350 Amp 0.0350 Amp -
Craftsmanship CMOS CMOS CMOS -
terminal coating MATTE TIN MATTE TIN MATTE TIN -
Terminal spacing 1.27 mm 1.27 mm 1.27 mm -
ime_peak_reflow_temperature_max__s_ 40 40 40 -
ggle_bi YES YES YES -
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