SST39SF020A-55-5I-WHE datasheet, PDF

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SST39SF020A-55-5I-WHE: Description128K X 8 FLASH 5V PROM, 55 ns, PQCC32; Categorystorage storage; File Size281KB，28 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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SST39SF020A-55-5I-WHE Overview

128K X 8 FLASH 5V PROM, 55 ns, PQCC32

SST39SF020A-55-5I-WHE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	TSSOP,
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	55 ns
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	12.4 mm
memory density	2097152 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	8 mm
Base Number Matches	1

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose

Flash (MPF) devices manufactured with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program

or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts

for x8 memories

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

– Uniform 4 KByte sectors

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Fast Read Access Time:

– 55 ns

– 70 ns

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• Latched Address and Data

• Automatic Write Timing

– Internal V

Generation

• All devices are RoHS compliant

www.microchip.com

DS25022B

04/13

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

Product Description

The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tun-

neling injector attain better reliability and manufacturability compared with alternate approaches. The

SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the comple-

tion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data

retention is rated at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for applications that require convenient and econom-

ical updating of program, configuration, or data memory. For all system applications, they significantly

improve performance and reliability, while lowering power consumption. They inherently use less

energy during erase and program than alternative flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead

PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4

for pin assignments.

DS25022B

04/13

SST39SF020A-55-5I-WHE Related Products

	SST39SF020A-55-5I-WHE	SST39SF040	SST39SF010A	SST39SF020A
Description	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32
length	12.4 mm	13.97 mm	13.97 mm	13.97 mm
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	32	32	32	32
Maximum operating temperature	85 °C	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 °C	-40 Cel	-40 Cel	-40 Cel
organize	256KX8	128KX8	128KX8	128KX8
surface mount	YES	YES	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	J BEND	J BEND	J BEND
Terminal location	DUAL	QUAD	QUAD	QUAD
width	8 mm	11.43 mm	11.43 mm	11.43 mm
Rated supply voltage	-	5 V	5 V	5 V
Minimum supply/operating voltage	-	4.5 V	4.5 V	4.5 V
Maximum supply/operating voltage	-	5.5 V	5.5 V	5.5 V
Processing package description	-	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32
each_compli	-	Yes	Yes	Yes
EU RoHS regulations	-	Yes	Yes	Yes
China RoHS regulations	-	Yes	Yes	Yes
state	-	Active	Active	Active
ype	-	NOR TYPE	NOR TYPE	NOR TYPE
sub_category	-	Flash Memories	Flash Memories	Flash Memories
ccess_time_max	-	55 ns	55 ns	55 ns
command_user_interface	-	YES	YES	YES
data_polling	-	YES	YES	YES
jesd_30_code	-	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32
jesd_609_code	-	e3	e3	e3
storage density	-	1.05E6 bit	1.05E6 bit	1.05E6 bit
Memory IC type	-	FLASH	FLASH	FLASH
moisture_sensitivity_level	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
umber_of_sectors_size	-	32	32	32
Number of digits	-	128K	128K	128K
operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Packaging Materials	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
ckage_code	-	QCCJ	QCCJ	QCCJ
ckage_equivalence_code	-	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6
packaging shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	-	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
serial parallel	-	PARALLEL	PARALLEL	PARALLEL
eak_reflow_temperature__cel_	-	260	260	260
wer_supplies__v_	-	5	5	5
gramming_voltage__v_	-	5	5	5
qualification_status	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
seated_height_max	-	3.56 mm	3.56 mm	3.56 mm
sector_size__words_	-	4K	4K	4K
standby_current_max	-	1.00E-4 Amp	1.00E-4 Amp	1.00E-4 Amp
Maximum supply voltage	-	0.0350 Amp	0.0350 Amp	0.0350 Amp
Craftsmanship	-	CMOS	CMOS	CMOS
terminal coating	-	MATTE TIN	MATTE TIN	MATTE TIN
Terminal spacing	-	1.27 mm	1.27 mm	1.27 mm
ime_peak_reflow_temperature_max__s_	-	40	40	40
ggle_bi	-	YES	YES	YES

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