SST39SF020A datasheet, PDF - EEWORLD Datasheet

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SST39SF020A: Description128K X 8 FLASH 5V PROM, 55 ns, PQCC32; Categorystorage; File Size281KB，28 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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SST39SF020A Overview

128K X 8 FLASH 5V PROM, 55 ns, PQCC32

SST39SF020A Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Rated supply voltage	5 V
Minimum supply/operating voltage	4.5 V
Maximum supply/operating voltage	5.5 V
Processing package description	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32
each_compli	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	Active
ype	NOR TYPE
sub_category	Flash Memories
ccess_time_max	55 ns
command_user_interface	YES
data_polling	YES
jesd_30_code	R-PQCC-J32
jesd_609_code	e3
storage density	1.05E6 bit
Memory IC type	FLASH
memory width	8
moisture_sensitivity_level	NOT SPECIFIED
umber_of_sectors_size	32
Number of digits	131072 words
Number of digits	128K
operating mode	ASYNCHRONOUS
organize	128KX8
Packaging Materials	PLASTIC/EPOXY
ckage_code	QCCJ
ckage_equivalence_code	LDCC32,.5X.6
packaging shape	RECTANGULAR
Package Size	CHIP CARRIER
serial parallel	PARALLEL
eak_reflow_temperature__cel_	260
wer_supplies__v_	5
gramming_voltage__v_	5
qualification_status	COMMERCIAL
seated_height_max	3.56 mm
sector_size__words_	4K
standby_current_max	1.00E-4 Amp
Maximum supply voltage	0.0350 Amp
surface mount	YES
Craftsmanship	CMOS
Temperature level	INDUSTRIAL
terminal coating	MATTE TIN
Terminal form	J BEND
Terminal spacing	1.27 mm
Terminal location	QUAD
ime_peak_reflow_temperature_max__s_	40
ggle_bi	YES
length	13.97 mm
width	11.43 mm

User Manual

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose

Flash (MPF) devices manufactured with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program

or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts

for x8 memories

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

– Uniform 4 KByte sectors

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Fast Read Access Time:

– 55 ns

– 70 ns

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• Latched Address and Data

• Automatic Write Timing

– Internal V

Generation

• All devices are RoHS compliant

www.microchip.com

DS25022B

04/13

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

Product Description

The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tun-

neling injector attain better reliability and manufacturability compared with alternate approaches. The

SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the comple-

tion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data

retention is rated at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for applications that require convenient and econom-

ical updating of program, configuration, or data memory. For all system applications, they significantly

improve performance and reliability, while lowering power consumption. They inherently use less

energy during erase and program than alternative flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead

PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4

for pin assignments.

DS25022B

04/13

SST39SF020A Related Products

	SST39SF020A	SST39SF040	SST39SF010A	SST39SF020A-55-5I-WHE
Description	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32
Number of functions	1	1	1	1
Number of terminals	32	32	32	32
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 °C
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 °C
memory width	8	8	8	8
organize	128KX8	128KX8	128KX8	256KX8
surface mount	YES	YES	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	J BEND	J BEND	J BEND	GULL WING
Terminal location	QUAD	QUAD	QUAD	DUAL
length	13.97 mm	13.97 mm	13.97 mm	12.4 mm
width	11.43 mm	11.43 mm	11.43 mm	8 mm
Rated supply voltage	5 V	5 V	5 V	-
Minimum supply/operating voltage	4.5 V	4.5 V	4.5 V	-
Maximum supply/operating voltage	5.5 V	5.5 V	5.5 V	-
Processing package description	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	-
each_compli	Yes	Yes	Yes	-
EU RoHS regulations	Yes	Yes	Yes	-
China RoHS regulations	Yes	Yes	Yes	-
state	Active	Active	Active	-
ype	NOR TYPE	NOR TYPE	NOR TYPE	-
sub_category	Flash Memories	Flash Memories	Flash Memories	-
ccess_time_max	55 ns	55 ns	55 ns	-
command_user_interface	YES	YES	YES	-
data_polling	YES	YES	YES	-
jesd_30_code	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	-
jesd_609_code	e3	e3	e3	-
storage density	1.05E6 bit	1.05E6 bit	1.05E6 bit	-
Memory IC type	FLASH	FLASH	FLASH	-
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
umber_of_sectors_size	32	32	32	-
Number of digits	128K	128K	128K	-
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
ckage_code	QCCJ	QCCJ	QCCJ	-
ckage_equivalence_code	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	-
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package Size	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	-
serial parallel	PARALLEL	PARALLEL	PARALLEL	-
eak_reflow_temperature__cel_	260	260	260	-
wer_supplies__v_	5	5	5	-
gramming_voltage__v_	5	5	5	-
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
seated_height_max	3.56 mm	3.56 mm	3.56 mm	-
sector_size__words_	4K	4K	4K	-
standby_current_max	1.00E-4 Amp	1.00E-4 Amp	1.00E-4 Amp	-
Maximum supply voltage	0.0350 Amp	0.0350 Amp	0.0350 Amp	-
Craftsmanship	CMOS	CMOS	CMOS	-
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN	-
Terminal spacing	1.27 mm	1.27 mm	1.27 mm	-
ime_peak_reflow_temperature_max__s_	40	40	40	-
ggle_bi	YES	YES	YES	-

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