SUD15P01-52 datasheet, PDF - EEWORLD Datasheet

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SUD15P01-52: DescriptionP-Channel 8-V (D-S), 175 C MOSFET; CategoryDiscrete semiconductor The transistor; File Size40KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SUD15P01-52 Overview

P-Channel 8-V (D-S), 175 C MOSFET

SUD15P01-52 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	15 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	21.4 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

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SUD15P01-52

New Product

Vishay Siliconix

P-Channel 8-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(W)

0.052 @ V

= –4.5 V

–8

0.070 @ V

= –2.5 V

0.105 @ V

= –1.8 V

FEATURES

(A)

–15

–13

–10.5

TrenchFETr Power MOSFET

175_C Junction Temperature

Low Gate Threshold

APPLICATIONS

Pass Transistor for LDOs

TO-252

Drain Connected to Tab

Top View

Order Number:

SUD15P01-52

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

= 25_C UNLESS OTHERWISE NOTED)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

= 175_C)

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation

Operating Junction and Storage Temperature Range

L = 0.1 mH

= 25_C

= 125_C

Symbol

, T

stg

Limit

–8

–15

–8.7

–25

–10

21.4

b, c

1.5

–55 to 175

Unit

THERMAL RESISTANCE RATINGS

Parameter

10 sec

Junction-to-Ambient

Junction-to-Case

Notes:

a. Duty cycle

1%.

b. When mounted on 1” square PCB (FR-4 material).

c. See SOA curve for voltage derating.

Steady State

thJA

thJC

Symbol

Typical

5.6

Maximum

100

Unit

_C/W

C/W

Document Number: 71806

S-20966—Rev. B, 01-Jul-02

www.vishay.com

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