SUP17N25-165
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
250
r
DS(on)
(Ω)
0.165 at V
GS
= 10 V
I
D
(A)
17
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
TO-220AB
D
G
G D S
Top View
Ordering Information:
SUP17N25-165-E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
250
± 20
17
9.8
20
5
1.25
136
b
3.75
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 72850
S-71599-Rev. B, 30-Jul-07
www.vishay.com
1
Symbol
R
thJA
R
thJC
Limit
40
1.1
Unit
°C/W
SUP17N25-165
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 15 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 14 A
V
GS
= 10 V, I
D
= 14 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 14 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 17 A
Min
250
2.5
Typ
a
Max
Unit
4.0
± 100
1
50
250
V
nA
µA
A
17
0.130
0.165
0.347
0.462
36
1950
Ω
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
160
70
30
45
pF
V
DS
= 125 V, V
GS
= 10 V, I
D
= 17 A
f = 1 MHz
V
DD
= 125 V, R
L
= 7.35
Ω
I
D
≅
17 A, V
GEN
= 10 V, R
g
= 2.5
Ω
10
10
1.6
15
130
30
100
25
195
45
150
17
20
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
A
V
ns
A
µC
I
F
= 17 A, V
GS
= 0 V
I
F
= 17 A, di/dt = 100 A/µs
0.9
115
10
0.58
1.5
175
15
1.3
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72850
S-71599-Rev. B, 30-Jul-07
SUP17N25-165
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10 thru 6 V
16
5V
I D - Drain Current (A)
I D - Drain Current (A)
12
12
16
20
8
8
T
C
= 125 °C
4
25 °C
- 55 °C
0
4
4V
0
0
4
8
12
16
20
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
60
T
C
= - 55 °C
50
r
DS(on)
- On-Resistance (Ω)
g fs - Transconductance (S)
25 °C
40
125 °C
30
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
4
8
12
16
20
0
4
0.32
0.28
Transfer Characteristics
V
GS
= 10 V
20
10
0
8
12
16
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
2800
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
C - Capacitance (pF)
2100
V
DS
= 125 V
I
D
= 17 A
C
iss
12
1400
8
700
C
rss
C
oss
0
0
40
80
120
160
200
4
0
0
8
16
24
32
40
48
56
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 72850
S-71599-Rev. B, 30-Jul-07
Gate Charge
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SUP17N25-165
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.8
V
GS
= 10 V
I
D
= 17 A
I S - Source Current (A)
100
2.4
r
DS(on)
- On-Resistance
(Normalized)
2.0
T
J
= 150 °C
10
1.6
1.2
T
J
= 25 °C
0.8
0.4
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
325
Source-Drain Diode Forward Voltage
310
10
I
Dav
(a)
295
I
D
= 10 mA
I
AV
(A) at T
A
= 25 °C
1
V
(BR)DSS
(V)
280
0.1
265
I
AV
(A) at T
A
= 150 °C
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
250
- 50
- 25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 72850
S-71599-Rev. B, 30-Jul-07
SUP17N25-165
Vishay Siliconix
THERMAL RATINGS
20
100
16
I D - Drain Current (A)
I D - Drain Current (A)
10
Limited by r
DS(on)
10 µs
12
100 µs
8
1
T
C
= 25 °C
Single Pulse
1 ms
10 ms
100 ms, DC
4
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0.1
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-
4
10-
3
10-
2
Square Wave Pulse Duration (sec)
10-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?72850.
Document Number: 72850
S-71599-Rev. B, 30-Jul-07
www.vishay.com
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