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MAALSS0042

Description
RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size744KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric Compare View All

MAALSS0042 Overview

RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

MAALSS0042 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMACOM
package instructionSOP8,.25
Reach Compliance Codecompli
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
Gain25 dB
Maximum input power (CW)17 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSOP8,.25
power supply5 V
RF/Microwave Device TypesNARROW BAND LOW POWER
surface mountYES
technologyGAAS
Terminal surfaceMatte Tin (Sn)
Maximum voltage standing wave ratio1.5
MAALSS0042
Low Noise Amplifier
1.575 GHz
Features
Low Noise Figure: 1.15 dB
High Gain: 27 dB
Low Power Consumption: 5V, 20 mA
High Dynamic Range
Lead-Free SOIC-8 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant Version of AM50-0002
Rev. V1
Functional Diagram
GND
GND
RF IN
GND
GND
RF OUT
Description
M/A-COM’s MAALSS0042 is a high performance
GaAs MMIC low noise amplifier in a lead-free SOIC
8-lead surface mount plastic package.
The
MAALSS0042 employs a monolithic 3-stage self-
bias design and a simple external matching network
to obtain minimum noise figure.
The MAALSS0042 is ideally suited for use where
low noise figure, high gain, high dynamic range and
low power consumption are required.
Typical
applications include receiver front ends in the Global
Positioning System (GPS) market, as well as
standard gain blocks, buffer amps, driver amps, and
IF amps in both fixed and portable systems.
M/A-COM’S MAALSS0042 is fabricated using a
mature 0.5-micron gate length GaAs process. The
process features full passivation for increased
performance reliability.
GND
GND
Pin Configuration
3,4,5
Pin No.
1
2
3
4
5
6
7
8
Pin Name
GND
RF IN
GND
GND
GND
RF OUT
GND
GND
Description
Ground
RF Input
Ground
Ground
Ground
RF Output, V
DD
Ground
Ground
Ordering Information
1,2
Part Number
MAALSS0042
MAALSS0042TR-3000
MAALSS0042SMB
Package
Bulk Packaging
3000 piece reel
Sample Test Board
3. Pins 1, 3, 4, 5, 7, and 8 must be RF and DC grounded (see
Recommended PCB Configuration).
4. Pin 2 is the RF input and must be connected to the simple
matching network shown in the Application Schematic.
5. Pin 6 is the RF output. V
DD
is also applied on Pin 6.
Absolute Maximum Ratings
6,7
Parameter
V
DD
Input Power
Channel Temperature
8
Operating Temperature
Storage Temperature
Absolute Maximum
+10 VDC
17 dBm
+150 °C
-40 °C to +85 °C
-65 °C to +150 °C
1. Reference Application Note M513 for reel size information.
2. Die quantity varies.
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. M/A-COM does not recommend sustained operation near
these survivability limits.
8. Typical thermal resistance (θjc) = +165 °C/W
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

MAALSS0042 Related Products

MAALSS0042 MAALSS0042SMB
Description RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
structure COMPONENT COMPONENT
Maximum operating temperature 85 °C 85 Cel
Minimum operating temperature -40 °C -40 Cel
Maximum voltage standing wave ratio 1.5 1.5
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