1N4006G datasheet, PDF - EEWORLD Datasheet

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1N4006G: DescriptionSILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size750KB，2 Pages; ManufacturerETC1

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1N4006G Overview

SILICON, SIGNAL DIODE

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1N4001G THRU 1N4007G

Reverse Voltage - 50 to 1000 Volts

GENERAL PURPOSE SILICON RECTIFIER

Forward Current - 1.0 Ampere

FEATURES

●

Glass Passivated Die Construction

●

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

●

Construction utilizes void-free

molded plastic technique

●

Low reverse leakage

●

High forward surge current capability

●

High temperature soldering guaranteed:

250 C/10 seconds,0.375

”

(9.5mm) lead length,

5 lbs. (2.3kg) tension

DO-41

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160(4.1)

MECHANICAL DATA

Case

: JEDEC DO-41 molded plastic body

Terminals

: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity

: Color band denotes cathode end

Mounting Position

: Any

Weight

:0.012 ounce, 0.33 grams

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T

A

=75 C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

T

A

=25 C

at rated DC blocking voltage

T

A

=100 C

Typical junction capacitance (NOTE 1)

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

SYMBOLS

1N

4001G 4002G 4003G 4004G 4005G 4006G 4007G

UNITS

V

A

V

µA

V

RRM

V

RMS

V

DC

I

(AV)

I

FSM

V

F

I

R

C

J

R

JA

T

J

,

T

STG

50

35

50

100

70

100

200

140

200

400

280

400

1.0

30.0

1.0

5.0

50.0

600

420

600

800

560

800

1000

700

1000

8.0

100

-65 to +175

pF

K/W

C

Note:1.Measured

at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

1N4006G Related Products

	1N4006G	1N4007G	1N4005G	1N4003G	1N4004G	1N4002G	1N4001G
Description	SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
Number of terminals	-	2	2	-	2	-	2
Number of components	-	1	1	-	1	-	1
Processing package description	-	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	-	PLASTIC PACKAGE-2	-	Plastic, DO-41, 2 PIN
state	-	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	ACTIVE
packaging shape	-	round	ROUND	-	round	-	round
Package Size	-	LONG FORM	LONG FORM	-	LONG FORM	-	LONG FORM
Terminal form	-	Wire	WIRE	-	Wire	-	Wire
Terminal location	-	AXIAL	AXIAL	-	AXIAL	-	AXIAL
Packaging Materials	-	Plastic/Epoxy	PLASTIC/EPOXY	-	Plastic/Epoxy	-	Plastic/Epoxy
structure	-	single	SINGLE	-	single	-	single
Shell connection	-	isolation	ISOLATED	-	isolation	-	isolation
Diode component materials	-	silicon	SILICON	-	silicon	-	silicon
Diode type	-	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	SIGNAL DIODE	Signal diode
Maximum repetitive peak reverse voltage	-	1000 V	600 V	-	400 V	-	50 V
Maximum average forward current	-	1 A	1 A	-	1 A	-	1 A

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