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1N4005G

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size750KB,2 Pages
ManufacturerETC1
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1N4005G Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1N4005G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingPURE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A
1N4001G THRU 1N4007G
Reverse Voltage - 50 to 1000 Volts
GENERAL PURPOSE SILICON RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
Glass Passivated Die Construction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-41
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
MECHANICAL DATA
Case
: JEDEC DO-41 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.012 ounce, 0.33 grams
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.0
5.0
50.0
600
420
600
800
560
800
1000
700
1000
8.0
100
-65 to +175
pF
K/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

1N4005G Related Products

1N4005G 1N4007G 1N4006G 1N4003G 1N4004G 1N4002G 1N4001G
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
Number of terminals 2 2 - - 2 - 2
Number of components 1 1 - - 1 - 1
Processing package description GREEN, PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 - - PLASTIC PACKAGE-2 - Plastic, DO-41, 2 PIN
state ACTIVE ACTIVE - ACTIVE DISCONTINUED ACTIVE ACTIVE
packaging shape ROUND round - - round - round
Package Size LONG FORM LONG FORM - - LONG FORM - LONG FORM
Terminal form WIRE Wire - - Wire - Wire
Terminal location AXIAL AXIAL - - AXIAL - AXIAL
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy - - Plastic/Epoxy - Plastic/Epoxy
structure SINGLE single - - single - single
Shell connection ISOLATED isolation - - isolation - isolation
Diode component materials SILICON silicon - - silicon - silicon
Diode type SIGNAL DIODE Signal diode - Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum repetitive peak reverse voltage 600 V 1000 V - - 400 V - 50 V
Maximum average forward current 1 A 1 A - - 1 A - 1 A
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