1N4001G THRU 1N4007G
Reverse Voltage - 50 to 1000 Volts
GENERAL PURPOSE SILICON RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
●
Glass Passivated Die Construction
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Construction utilizes void-free
molded plastic technique
●
Low reverse leakage
●
High forward surge current capability
●
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-41
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
MECHANICAL DATA
Case
: JEDEC DO-41 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.012 ounce, 0.33 grams
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.0
5.0
50.0
600
420
600
800
560
800
1000
700
1000
8.0
100
-65 to +175
pF
K/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
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