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1N4005G

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size179KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1N4005G Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1N4005G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingPURE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A
1N4001G - 1N4007G
1.0 AMP. Glass Passivated Rectifiers
DO-41
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C /10 seconds/.375”,(9.5mm) lead lengths
at 5 lbs.,(2.3kg) tension
Weight: 0.35 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
A
= 75
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Notes:
Symbol
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Units
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
30
1.0
5.0
100
10
A
V
uA
uA
pF
o
C/W
o
C
Cj
R
θJA
T
J
,T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
80
- 65 to + 150
http://www.luguang.cn
mail:lge@luguang.cn

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