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1N4003G

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size19KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Environmental Compliance
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1N4003G Overview

SIGNAL DIODE

1N4003G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSynSemi
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
1N4001G - 1N4007G
BY133G
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
1.0
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
420
600
560
800
700
1000
BY
133G
1300
910
1300
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : January 10, 2004

1N4003G Related Products

1N4003G 1N4004G 1N4002G 1N4007G 1N4006G 1N4005G BY133G 1N4001G
Description SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE glass passivated junction silicon rectifiers
Maker SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknown
Is it Rohs certified? conform to conform to - conform to conform to conform to - conform to
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1 V 1.1 V 1.1 V 1.1 V - 1.1 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A - 30 A
Number of components 1 1 1 1 1 1 - 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C - 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A - 1 A
Maximum repetitive peak reverse voltage 200 V 400 V 100 V 1000 V 800 V 600 V - 50 V
surface mount NO NO NO NO NO NO - NO
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