UNISONIC TECHNOLOGIES CO., LTD
3N40
Preliminary
Power MOSFET
3A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
The UTC
3N40
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
3N40
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
TO-220F
1
FEATURES
TO-252
* R
DS(ON)
<2.0Ω @ V
GS
=10V, I
D
=1.5A
* High switching speed
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N40L-TF3-T
3N40G-TF3-T
3N40L-TN3-R
3N40G-TN3-R
3N40L-TND-R
3N40G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-553.d
3N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
3
A
Drain Current
Pulsed (Note 2)
I
DM
12
A
Single Pulsed (Note 3)
E
AS
290
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
3
mJ
TO-220F
25
W
Power Dissipation
TO-252/TO-252D
50
W
P
D
TO-220F
0.2
W/°C
Derate above 25°C
TO-252/TO-252D
0.4
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, I
AS
=3.0 A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
PARAMETER
TO-220F
Junction to Ambient
TO-252/TO-252D
TO-220F
Junction to Case
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-553.d
3N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
400
V
0.38
V/°C
10
µA
+100 nA
-100 nA
4.0
2.0
445
60
13
40
40
100
60
40
3.6
9.8
545
80
16
50
60
120
80
60
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
GS
=10V, V
DD
=30V, I
D
=1A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=100V, I
D
=3A, I
G
=3.3mA
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
2.0
3.0
12
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-553.d
3N40
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
P. W.
Period
D=
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-553.d
3N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-553.d
京公网安备 11010802033920号
EEWORLD
