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3N40L-TN3-R

Description
3A, 400V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size209KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

3N40L-TN3-R Overview

3A, 400V N-CHANNEL POWER MOSFET

3N40L-TN3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)290 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance1.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)12 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
3N40
Preliminary
Power MOSFET
3A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
The UTC
3N40
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
3N40
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
TO-220F
1
FEATURES
TO-252
* R
DS(ON)
<2.0Ω @ V
GS
=10V, I
D
=1.5A
* High switching speed
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N40L-TF3-T
3N40G-TF3-T
3N40L-TN3-R
3N40G-TN3-R
3N40L-TND-R
3N40G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-553.d

3N40L-TN3-R Related Products

3N40L-TN3-R 3N40L-TF3-T 3N40G-TN3-R 3N40G-TF3-T 3N40G-TND-R 3N40L-TND-R 3N40_15
Description 3A, 400V N-CHANNEL POWER MOSFET 3A, 400V N-CHANNEL POWER MOSFET 3A, 400V N-CHANNEL POWER MOSFET 3A, 400V N-CHANNEL POWER MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
Is it Rohs certified? conform to conform to conform to conform to - - -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - - -
Parts packaging code TO-252 TO-220AB TO-252 TO-220AB - - -
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 - - -
Contacts 4 3 4 3 - - -
Reach Compliance Code compli compli compli compli - - -
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ 290 mJ 290 mJ - - -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - -
Minimum drain-source breakdown voltage 400 V 400 V 400 V 400 V - - -
Maximum drain current (Abs) (ID) 3 A 3 A 3 A 3 A - - -
Maximum drain current (ID) 3 A 3 A 3 A 3 A - - -
Maximum drain-source on-resistance 1.6 Ω 1.6 Ω 1.6 Ω 1.6 Ω - - -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - -
JEDEC-95 code TO-252 TO-220AB TO-252 TO-220AB - - -
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 R-PSFM-T3 - - -
Number of components 1 1 1 1 - - -
Number of terminals 2 3 2 3 - - -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
Package form SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT - - -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - - -
Maximum power dissipation(Abs) 50 W 25 W 50 W 25 W - - -
Maximum pulsed drain current (IDM) 12 A 12 A 12 A 12 A - - -
surface mount YES NO YES NO - - -
Terminal form GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE - - -
Terminal location SINGLE SINGLE SINGLE SINGLE - - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - - -
Transistor component materials SILICON SILICON SILICON SILICON - - -
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