N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
| 3N40_15 | 3N40L-TN3-R | 3N40L-TF3-T | 3N40G-TN3-R | 3N40G-TF3-T | 3N40G-TND-R | 3N40L-TND-R | |
|---|---|---|---|---|---|---|---|
| Description | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | 3A, 400V N-CHANNEL POWER MOSFET | 3A, 400V N-CHANNEL POWER MOSFET | 3A, 400V N-CHANNEL POWER MOSFET | 3A, 400V N-CHANNEL POWER MOSFET | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | - | - |
| Maker | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | - |
| Parts packaging code | - | TO-252 | TO-220AB | TO-252 | TO-220AB | - | - |
| package instruction | - | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | - | - |
| Contacts | - | 4 | 3 | 4 | 3 | - | - |
| Reach Compliance Code | - | compli | compli | compli | compli | - | - |
| Avalanche Energy Efficiency Rating (Eas) | - | 290 mJ | 290 mJ | 290 mJ | 290 mJ | - | - |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
| Minimum drain-source breakdown voltage | - | 400 V | 400 V | 400 V | 400 V | - | - |
| Maximum drain current (Abs) (ID) | - | 3 A | 3 A | 3 A | 3 A | - | - |
| Maximum drain current (ID) | - | 3 A | 3 A | 3 A | 3 A | - | - |
| Maximum drain-source on-resistance | - | 1.6 Ω | 1.6 Ω | 1.6 Ω | 1.6 Ω | - | - |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
| JEDEC-95 code | - | TO-252 | TO-220AB | TO-252 | TO-220AB | - | - |
| JESD-30 code | - | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | - | - |
| Number of components | - | 1 | 1 | 1 | 1 | - | - |
| Number of terminals | - | 2 | 3 | 2 | 3 | - | - |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C | 150 °C | - | - |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
| Package form | - | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | - | - |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
| Maximum power dissipation(Abs) | - | 50 W | 25 W | 50 W | 25 W | - | - |
| Maximum pulsed drain current (IDM) | - | 12 A | 12 A | 12 A | 12 A | - | - |
| surface mount | - | YES | NO | YES | NO | - | - |
| Terminal form | - | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | - | - |
| Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE | - | - |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | - |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON | - | - |
京公网安备 11010802033920号
EEWORLD
