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AM2300N

Description
N-Channel 20-V (D-S) MOSFET
File Size230KB,5 Pages
ManufacturerAnalog Power
Websitehttp://www.analogpowerinc.com/index.html
Download Datasheet View All

AM2300N Overview

N-Channel 20-V (D-S) MOSFET

Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are DC-DC converters, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Low gate charge 7nC
High performance
High current handling
Miniature SOT-23 Surface Mount Package
Saves Board Space
AM2300N
2.
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.035 @ V
GS
= 4.5V
20
0.050 @ V
GS
= 2.5V
at
ed
V
I
D
(A)
4.3
3.5
5-
R
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
V
DS
20
Drain-Source Voltage
V
±8
V
GS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
4.3
3.3
10
0.46
1.25
0.8
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
Symbol
R
THJA
Maximum
100
166
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2300_D
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