BAT81S...BAT83S
Vishay Telefunken
Schottky Barrier Diodes
Features
D
Integrated protection ring against
static discharge
D
D
D
D
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
Applications
General purpose and switching
Schottky barrier diode
HF–Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
Test Conditions
Type
BAT81S
BAT82S
BAT83S
Symbol
V
R
V
R
V
R
I
FSM
I
FRM
I
F
T
j
T
stg
Value
40
50
60
500
150
30
125
–65...+150
Unit
V
V
V
mA
mA
mA
°
C
°
C
Peak forward surge current
Repetitive peak forward current
Forward current
Junction temperature
Storage temperature range
T
j
= 25
_
C
Parameter
Junction ambient
T
j
= 25
_
C
Parameter
Forward voltage
g
t
p
≤10ms
t
p
≤1s
Maximum Thermal Resistance
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
320
Unit
K/W
Electrical Characteristics
Test Conditions
I
F
=0.1mA
I
F
=1mA
I
F
=15mA
V
R
=V
Rmax
V
R
=1V, f=1MHz
Type
Symbol
V
F
V
F
V
F
I
R
C
D
Min
Typ
Max
330
410
1
200
1.6
Unit
mV
mV
V
nA
pF
Reverse current
Diode capacitance
Document Number 85512
Rev. 3, 01-Apr-99
www.vishay.de
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BAT81S...BAT83S
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
14
P
R
– Reverse Power Dissipation ( mW )
V
R
= 60 V
12
10
8
6
4
2
0
25
15794
1000
100
T
j
= 150°C
10
T
j
= 25°C
1
0.1
0.01
50
75
100
125
150
15796
R
thJA
=
540K/W
P
R
–Limit
@100%V
R
P
R
–Limit
@80%V
R
I
F
– Forward Current ( A )
0
0.5
1.0
1.5
2.0
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000.0
V
R
= V
RRM
Figure 3. Forward Current vs. Forward Voltage
2.0
1.8
C
D
– Diode Capacitance ( pF )
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
15797
f=1MHz
I
R
– Reverse Current (
m
A )
100.0
10.0
1.0
0.1
25
15795
50
75
100
125
150
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
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Document Number 85512
Rev. 3, 01-Apr-99
BAT81S...BAT83S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 85512
Rev. 3, 01-Apr-99
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