BD135 / 137 / 139 — Features
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CBO
Collector-Base Voltage
Parameter
BD135
BD137
BD139
BD135
BD137
BD139
Value
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 to +150
Units
V
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Device Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
A
W
W
°C
°C
T
C
= 25°C
T
A
= 25°C
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
Parameter
Collector-Emitter Sustaining
Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD135
BD137
BD139
Test Condition
I
C
= 30 mA, I
B
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 150 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 2 V, I
C
= 0.5 A
Min.
45
60
80
Typ.
Max.
Units
V
0.1
10
25
25
40
μA
μA
250
0.5
1
V
V
h
FE
Classification
Classification
h
FE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
2
BD135 / 137 / 139 — Features
Typical Performance Characteristics
100
90
80
V
CE
(sat)[mV], SATURATION VOLTAGE
V
CE
= 2V
500
450
400
350
300
250
200
150
100
50
0
1E-3
h
FE
, DC CURRENT GAIN
70
60
50
40
30
20
10
0
10
100
1000
I
C
= 20 I
B
0.01
0.1
1
I
C
= 10
I
B
10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1.1
10
V
BE
[V], BASE-EMITTER VOLTAGE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-3
0.01
BE
I
C
[A], COLLECTOR CURRENT
t)
(sa
I
B
V
10
I
C
=
)
(on
V
V
=5
E
V
C
BE
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
s
1m
1
10us
100us
DC
0.1
BD139
BD137
BD135
0.01
0.1
1
10
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
P
C
[W], POWER DISSIPATION
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
3
BD135 / 137 / 139 — Features
Physical Dimensions
TO-126 3L
Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf.
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
4
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Rev. I65
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