They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
Value
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
-65 to +150
-65 to +150
Unit
V
CEO
Collector-Emitter Voltage
I
B
= 0
V
V
CBO
Collector- Emitter Voltage I
E
= 0
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I
C
= 0
V
V
EBO
I
C
I
B
P
t
T
J
T
Stg
V
A
A
W
°C
°C
25°C case temperatur
25°C free aire temperatur
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
Value
0.83
35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
Min
-45
-60
-80
-100
-120
-
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
-1
Unit
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
I
C
=30 mA
I
B
=0
V
I
CEO
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
EBO
h
FE
V
CE(SAT)
V
BE(on)
V
EC
t
on
t
off
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
Turn-on time
Turn-off time
I
B
=0, V
CE
=-30 V
I
B
=0, V
CE
=-30 V
I
B
=0, V
CE
=-40 V
I
B
=0, V
CE
=-50 V
I
B
=0, V
CE
=-60 V
I
E
= 0, V
CB
=-45 V
I
E
= 0, V
CB
=-60 V
I
E
= 0, V
CB
=-80 V
I
E
= 0, V
CB
=-100 V
I
E
= 0, V
CB
=-120 V
V
CB
=-45 V, I
E
= 0
BDW84
T
case
= 150°C
V
CB
=-60 V, I
E
= 0
BDW84A
T
case
= 150°C
V
CB
=-80 V, I
E
= 0
BDW84B
T
case
= 150°C
V
CB
=-100 V, I
E
= 0
BDW84C
T
case
= 150°C
V
CB
=-120 V, I
E
= 0
BDW84D
T
case
= 150°C
V
EB
=-5.0 V, I
C
=0
I
C
=-6 A , V
CE
=-3.0 V
I
C
=-15 A , V
CE
=-3.0 V
I
C
=-6 A , I
B
=-12 mA
I
C
=-15 A , I
B
=-150 mA
I
C
=-6 A , I
B
=-3 A
I
E
=-15 A , I
E
= 0
IC = -10 A,
IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) = 4.2V
Duty Cycle≤2%
mA
-
-
-0.5
mA
-
-
-5
-
750
100
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
7
-2
20 K
-
-2.5
-4
-2.5
-3.5
-
-
mA
-
V
V
V
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
23/10/2012
COMSET SEMICONDUCTORS
2|3
PNP BDW84 – BDW84A – BDW84B
BDW84C – BDW84D
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
15.20
1.90
4.60
3.10
Max.
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
0.35
5.35
20.00
19.60
0.95
4.80
Pin 1 :
Pin 2 :
Pin 3 :
Base
Collector
Emitter
The centre pin is in electrical
contact with the mounting tab.
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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