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BFU710F

Description
NPN wideband silicon germanium RF transistor
File Size113KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BFU710F Overview

NPN wideband silicon germanium RF transistor

BFU710F
NPN wideband silicon germanium RF transistor
Rev. 1 — 20 April 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 1.45 dB at 12 GHz
High maximum power gain 14 dB at 12 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Low noise amplifiers for microwave communications systems
Ka band oscillators DRO’s
Low current battery equipped applications
Microwave driver / buffer applications
GPS
RKE
AMR
ZigBee
FM radio
Mobile TV
Bluetooth
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