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BFU790F

Description
NPN wideband silicon germanium RF transistor
File Size108KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BFU790F Overview

NPN wideband silicon germanium RF transistor

BFU790F
NPN wideband silicon germanium RF transistor
Rev. 1 — 22 April 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high linearity microwave transistor
110 GHz f
T
silicon germanium technology
High maximum output power at 1 dB compression 20 dBm at 1.8 GHz
1.3 Applications
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
ZigBee
LTE, cellular, UMTS
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