SEMICONDUCTORS
BUZ71
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in switched mode power supplies,
motor control, welding,
DC-DC & DC-AC converters, and in general purpose
switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
I
DS
I
DM
I
AR
E
AS
E
AR
V
GS
R
DS(on)
P
T
t
J
t
stg
Ratings
Drain-Source Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Avalanche Current, Limited by T
jmax
Avalanche Energy, Single pulse
I
D
= 14 A, V
DD
= 25 V, R
GS
= 25
Ω,
L= 30.6 µH, T
j
= 25°C
Avalanche Energy, Periodic Limited by T
jmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Value
50
14
56
14
6
1
20
0.1
40
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
3.1
75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
BUZ71
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DSS
V
GS(th)
I
DSS
Ratings
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage
Current
Drain-Source on Resistance
Test Condition(s)
I
D
= 250 µA, V
GS
= 0 V
I
D
=1 mA, V
GS
= V
DS
V
DS
= 50 V, V
GS
= 0 V
T
j
= 25 °C
V
DS
= 50 V, V
GS
= 0 V
T
j
= 125 °C
V
GS
= 20 V, V
DS
= 0 V
I
D
= 9 A, V
GS
= 10 V
Min
50
2.1
-
-
-
-
Typ
-
3
-
-
-
0.08
Max
-
4
1
Unit
V
V
µA
100
100
0.1
nA
Ω
I
GSS
R
DS(on)
DYNAMIC CHARACTERISTICS
Symbol
g
fs
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
t
f
Ratings
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
V
DS
= 2*I
D
*R
DS(on)max
I
D
= 9 A
V
GS
= 0 V, V
DS
= 25 V
f= 1MHz
Min
4
-
-
-
Typ
7.7
450
220
85
20
40
55
40
Max Unit
-
600
350
150
30
60
70
55
pF
S
V
DD
= 30 V, V
GS
= 10 V
I
D
= 3 A, R
GS
= 50
Ω
-
-
-
-
ns
REVERSE DIODE
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
01/10/2012
Ratings
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward
voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Condition(s)
T
C
= 25°C
T
C
= 25°C
V
GS
= 0 V, I
F
= 28 A
V
DD
= 30 V, I
F
= 14 A
di/dt = 100 A/µs
T
C
= 150°C
Min
-
-
-
-
-
Typ
-
-
1.5
60
0.1
Max
14
Unit
A
56
1.8
-
-
2/3
V
ns
µC
COMSET SEMICONDUCTORS
SEMICONDUCTORS
BUZ71
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Gate
Drain
Source
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
01/10/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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