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ES1BL

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size127KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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ES1BL Overview

1 A, 100 V, SILICON, SIGNAL DIODE

SIYU
R
表面安装超快速整流二极管
反向电压
50 --- 600V
正向电流
1.0 A
SOD123FL
ES1AL ...... ES1JL
Surface Mount Super Fast Recover Rectifiers
Reverse Voltage 50 to 600 V
Forward Current 1.0 A
特征
Features
·反向漏电流½
Low reverse leakage
·正向浪涌承受½力较强
High forward surge capability
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
seconds at terminals
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·封装: 塑料封装
Case: Molded plastic body
·端子: 焊料被镀
Terminals: Solder plated
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
ES1AL ES1BL ES1CL ES1DL ES1EL ES1GL ES1JL
50
35
50
100
70
100
150
105
150
200
140
200
1.0
30
85
300
210
300
400
280
400
600
420
600
单½
Unit
V
V
V
A
A
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
ES1AL ES1BL ES1CL ES1DL ES1EL ES1GL ES1JL
0.95
5.0
100
35
1.25
1.7
单½
Unit
V
μA
nS
I
F
= 1.0A
TA= 25℃
TA= 100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
最大反向电流
Maximum reverse current
I
R
trr
最大反向恢复时间
MAX. Reverse Recovery Time
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
Cj
15
pF
大昌电子
DACHANG ELECTRONICS

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ES1BL ES1AL ES1CL ES1DL ES1EL ES1GL ES1JL
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