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IRLR6225PBF

Description
42 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size295KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLR6225PBF Overview

42 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRLR6225PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)170 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)63 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97594
IRLR6225PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
20
4.0
5.2
48
2.2
42
h
V
mΩ
mΩ
nC
A
G
S
D
D
R
DS(on) max
(@V
GS
= 2.5V)
S
G
Q
g (typical)
R
G (typical)
I
D
Applications
D-Pak
IRLR6225PbF
D
Drain
S
Source
G
Gate
Battery Protection Switch
Features and Benefits
Features
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
2000
Tape and Reel
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
20
±12
100
63
400
63
25
Units
V
A
W
W/°C
°C
g
g
c
h
h
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
g
0.5
-55 to + 150
300 (1.6mm from case)
Notes

through
†
are on page 8
www.irf.com
1
11/15/2010

IRLR6225PBF Related Products

IRLR6225PBF IRLR6225TRPbF
Description 42 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA TO-252AA
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 170 mJ 170 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (Abs) (ID) 100 A 100 A
Maximum drain current (ID) 42 A 42 A
Maximum drain-source on-resistance 0.004 Ω 0.004 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 63 W 63 W
Maximum pulsed drain current (IDM) 400 A 400 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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