PD - 97594
IRLR6225PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
20
4.0
5.2
48
2.2
42
h
V
mΩ
mΩ
nC
Ω
A
G
S
D
D
R
DS(on) max
(@V
GS
= 2.5V)
S
G
Q
g (typical)
R
G (typical)
I
D
Applications
D-Pak
IRLR6225PbF
D
Drain
S
Source
G
Gate
•
Battery Protection Switch
Features and Benefits
Features
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
2000
Tape and Reel
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
20
±12
100
63
400
63
25
Units
V
A
W
W/°C
°C
g
g
c
h
h
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
g
0.5
-55 to + 150
300 (1.6mm from case)
Notes
through
are on page 8
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1
11/15/2010
IRLR6225PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
205
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.6
3.2
4.2
0.8
-4.0
–––
–––
–––
–––
–––
48
2.6
3.6
19
23
23
21
2.2
9.7
37
63
52
3770
915
650
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1mA
4.0
V
GS
= 4.5V, I
D
= 21A
mΩ
5.2
V
GS
= 2.5V, I
D
= 17A
1.1
V
V
DS
= V
GS
, I
D
= 50µA
––– mV/°C
1.0
V
DS
= 16V, V
GS
= 0V
µA
150
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
–––
S V
DS
= 10V, I
D
= 21A
72
–––
V
DS
= 10V
–––
V
GS
= 4.5V
nC
I
D
= 17A
–––
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
Ω
ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 17A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
170
17
6.3
Conditions
MOSFET symbol
showing the
integral reverse
G
pF
Avalanche Characteristics
E
AS
I
AR
E
AR
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
100
h
h
D
A
Ã
400
–––
–––
1.2
V
–––
35
53
ns
–––
57
86
nC
Time is dominated by parasitic Inductance
S
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A, V
DD
= 10V
di/dt = 200A/µs
e
eÃ
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
f
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
g
g
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
2
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IRLR6225PbF
1000
TOP
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
1000
TOP
VGS
10V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
100
10
1.5V
1.5V
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
1
10
100
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 42A
1.4
VGS = 4.5V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1
VDS = 10V
≤60µs
PULSE WIDTH
0.0
1.0
2.0
3.0
4.0
5.0
1.2
1.0
0.8
0.1
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 17A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
VDS= 4.0V
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLR6225PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
Limited by
Package
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 50µA
80
ID, Drain Current (A)
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLR6225PbF
RDS(on) , Drain-to -Source On Resistance (m
Ω)
8
700
EAS , Single Pulse Avalanche Energy (mJ)
ID = 17A
7
6
5
4
3
2
1
0
2
4
6
8
10
TJ = 25°C
TJ = 125°C
600
500
400
300
200
100
0
ID
TOP
5.9A
8.6A
BOTTOM 17A
12
14
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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