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HL1326GN97

Description
Laser Diode, 1310nm
CategoryLED optoelectronic/LED    photoelectric   
File Size123KB,12 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HL1326GN97 Overview

Laser Diode, 1310nm

HL1326GN97 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power5 mW
peak wavelength1310 nm
shapeROUND
size1.6 mm
Maximum threshold current20 mA
Base Number Matches1
HL1326GN
1.3
µm
InGaAsP Laser Diode
ADE-208-464 (Z)
1st. Edition
November 1996
Description
The HL1326GN is a 1.3
µm
InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source in short and medium range fiberoptic communication
systems and other types of optical equipment. It has high optical power with low drive current
and wide operating temperature range (–40 to +85°C). The compact package is suitable for module
assembly.
Features
Wide operating temperature range: T
opr
= –40 to +85°C
High output power: 10 mW(Pulse)
5 mW(CW)
Low operating current : I
op
(P
O
= 5mW) = 20 mA (typ. @Tc = 25°C)
I
op
(P
O
= 5mW) = 40 mA (typ. @Tc = 85°C)
Internal Circuit
2
1
LD
P
o
Glass
window
3
4
PD

HL1326GN97 Related Products

HL1326GN97 HL1326GN98
Description Laser Diode, 1310nm Laser Diode, 1310nm
Maker Hitachi (Renesas ) Hitachi (Renesas )
Reach Compliance Code unknow unknown
Configuration SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE
Number of functions 1 1
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Optoelectronic device types LASER DIODE LASER DIODE
Nominal output power 5 mW 5 mW
peak wavelength 1310 nm 1310 nm
shape ROUND ROUND
size 1.6 mm 1.6 mm
Maximum threshold current 20 mA 20 mA
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