UNISONIC TECHNOLOGIES CO., LTD
1N50Z
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N50Z
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
1N50Z
is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
TO-92
FEATURES
* R
DS(ON)
=4.6Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50ZL-T92-B
1N50ZG-T92-B
1N50ZL-T92-K
1N50ZG-T92-K
1N50ZL-T92-R
1N50ZG-T92-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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1 of 6
QW-R502-726.b
1N50Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±20
V
I
D
1.3 (Note 2)
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 3)
I
DM
5 (Note 2)
A
Avalanche Current (Note 3)
I
AR
1.3
A
113
mJ
Single Pulsed (Note 4)
E
AS
Avalanche Energy
Repetitive (Note 5)
E
AR
2.6
mJ
Power Dissipation
40
W
P
D
Derate above 25°C
0.32
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 120mH, I
AS
= 1.3A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= 25°C
5. I
SD
≤
1.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.13
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=500V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=0.65A
MIN TYP MAX UNIT
500
1
+5
-5
2.0
4.6
220
30
11
4.0
6.0
290
35
13
V
µA
µA
µA
V
Ω
pF
pF
pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
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QW-R502-726.b
1N50Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=1.5A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=1.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=1.3A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=1.5A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
11
1.6
5.5
12
13
42
15
16
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
35
35
90
40
1.3
5
1.15
162
0.54
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QW-R502-726.b
1N50Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4 of 6
QW-R502-726.b
1N50Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-726.b
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