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1N5625

Description
3 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size78KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

1N5625 Overview

3 A, 400 V, SILICON, RECTIFIER DIODE

1N5625 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Certificate TH97/10561QM
Certificate TW00/17276EM
1N5624 - 1N5627
PRV : 200 - 800 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
Glass passivated cavity-free junction
Low forward voltage drop
High reliability
Low reverse current
High forward surge capability
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.0400 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current, 8.3ms Single half
sine wave Superimposed on rated load (JEDEC Method)
at I
F
= 3.0 A , Ta = 25 °C
Maximum Forward Voltage
at I
F
= 3.0 A , Ta = 175 °C
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 175 °C
Maximum Full Load Reverse Current, Full Cycle Average
0.375"(9.5mm) Lead Length at Ta = 70 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
I
R(AV)
C
J
R
ӨJA
R
ӨJL
T
J
T
STG
1N5624
200
140
200
1N5625
400
280
400
1N5626
600
420
600
1N5627
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
µA
pF
°C/W
°C/W
°C
°C
3.0
125
1.00
0.95
5.0
300
150
40
20
10
- 65 to + 175
- 65 to + 175
200
100
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
with both leads attached between heat sinks
Page 1 of 2
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