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1N60L-T60-K

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size277KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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1N60L-T60-K Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-92
Power MOSFET
DESCRIPTION
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
SOT-223
1
TO-220
TO-220F
FEATURES
* V
DS
= 600V
* I
D
= 1.2A
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
1
TO-252
1
TO-126
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60L-AA3-R
1N60G-AA3-R
SOT-223
1N60L-T92-B
1N60G-T92-B
TO-92
1N60L-T92-K
1N60G-T92-K
TO-92
1N60L-TA3-T
1N60G-TA3-T
TO-220
1N60L-TF3-T
1N60G-TF3-T
TO-220F
1N60L-TM3-T
1N60G-TM3-T
TO-251
1N60L-TN3-R
1N60G-TN3-R
TO-252
1N60L-TN3-T
1N60G-TN3-T
TO-252
1N60L-T60-K
1N60G-T60-K
TO-126
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Box
Bulk
Tube
Tube
Tube
Tape Reel
Tube
Bulk
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-052.J

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