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2N6248

Description
10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size40KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2N6248 Overview

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3

2N6248 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityPNP
Maximum collector current10 A
Maximum Collector-Emitter Voltage100 V
Processing package descriptionTO-3, 2 PIN
stateACTIVE
packaging shaperound
Package SizeFlange mounting
Terminal formPIN/PEG
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Shell connectionCOLLECTOR
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption125 W
Transistor typeuniversal power supply
Minimum DC amplification factor20
Rated crossover frequency4 MHz
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
・High
gain at high current
APPLICATIONS
・General-purpose
types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6246 2N6247 2N6248
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6246
V
CBO
Collector-base voltage
2N6247
2N6248
2N6246
V
CEO
Collector-emitter voltage
2N6247
2N6248
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
70
90
110
60
80
100
5
15
5
125
150
-65~200
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.4
UNIT
℃/W
JMnic

2N6248 Related Products

2N6248 2N6246 2N6247 2N6246_15
Description 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Number of terminals 2 2 2 2
Maximum collector current 10 A 15 A 15 A 15 A
Maximum Collector-Emitter Voltage 100 V 60 V 60 V 60 V
Processing package description TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN
state ACTIVE Active Active Active
packaging shape round ROUND ROUND ROUND
Package Size Flange mounting FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
terminal coating tin lead TIN LEAD TIN LEAD TIN LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Packaging Materials Metal METAL METAL METAL
structure single SINGLE SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1 1
Transistor component materials silicon SILICON SILICON SILICON
Minimum DC amplification factor 20 20 20 20
Rated crossover frequency 4 MHz 4 MHz 4 MHz 4 MHz
each_compli - Yes Yes Yes
jedec_95_code - TO-3 TO-3 TO-3
jesd_30_code - O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
jesd_609_code - e0 e0 e0
moisture_sensitivity_level - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum operating temperature - 200 Cel 200 Cel 200 Cel
eak_reflow_temperature__cel_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
larity_channel_type - PNP PNP PNP
wer_dissipation_max__abs_ - 125 W 125 W 125 W
qualification_status - COMMERCIAL COMMERCIAL COMMERCIAL
sub_category - Other Transistors Other Transistors Other Transistors
surface mount - NO NO NO
ime_peak_reflow_temperature_max__s_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING

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