2N6246_15 datasheet, PDF - EEWORLD Datasheet

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2N6246_15: Description15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3; Categorysemiconductor Discrete semiconductor; File Size40KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2N6246_15 Overview

15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3

2N6246_15 Parametric

Parameter Name	Attribute value
Maximum collector current	15 A
Maximum Collector-Emitter Voltage	60 V
Number of terminals	2
Processing package description	TO-3, 2 PIN
each_compli	Yes
state	Active
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	20
jedec_95_code	TO-3
jesd_30_code	O-MBFM-P2
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	METAL
packaging shape	ROUND
Package Size	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	PNP
wer_dissipation_max__abs_	125 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	4 MHz

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Product Specification

www.jmnic.com

Silicon PNP Power Transistors

DESCRIPTION

・With

TO-3 package

・Low

collector saturation voltage

・Excellent

safe operating area

・High

gain at high current

APPLICATIONS

・General-purpose

types of switching

and linear-amplifier applications

PINNING

1

2

3

Base

Emitter

Collector

DESCRIPTION

2N6246 2N6247 2N6248

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=

℃)

SYMBOL

PARAMETER

2N6246

V

CBO

Collector-base voltage

2N6247

2N6248

2N6246

V

CEO

Collector-emitter voltage

2N6247

2N6248

V

EBO

I

C

I

B

P

T

j

T

stg

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Storage temperature

T

C

=25℃

Open collector

Open base

Open emitter

CONDITIONS

VALUE

70

90

110

60

80

100

5

15

5

125

150

-65~200

V

A

W

℃

V

UNIT

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

1.4

UNIT

℃/W

JMnic

2N6246_15 Related Products

	2N6246_15	2N6246	2N6247	2N6248
Description	15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3	15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3	15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3
Maximum collector current	15 A	15 A	15 A	10 A
Maximum Collector-Emitter Voltage	60 V	60 V	60 V	100 V
Number of terminals	2	2	2	2
Processing package description	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN
state	Active	Active	Active	ACTIVE
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
structure	SINGLE	SINGLE	SINGLE	single
Minimum DC amplification factor	20	20	20	20
Number of components	1	1	1	1
Packaging Materials	METAL	METAL	METAL	Metal
packaging shape	ROUND	ROUND	ROUND	round
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	Flange mounting
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	tin lead
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	silicon
Rated crossover frequency	4 MHz	4 MHz	4 MHz	4 MHz
each_compli	Yes	Yes	Yes	-
jedec_95_code	TO-3	TO-3	TO-3	-
jesd_30_code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	-
jesd_609_code	e0	e0	e0	-
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum operating temperature	200 Cel	200 Cel	200 Cel	-
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
larity_channel_type	PNP	PNP	PNP	-
wer_dissipation_max__abs_	125 W	125 W	125 W	-
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
sub_category	Other Transistors	Other Transistors	Other Transistors	-
surface mount	NO	NO	NO	-
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-

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