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2N6247

Description
15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size40KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2N6247 Overview

15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3

2N6247 Parametric

Parameter NameAttribute value
Maximum collector current15 A
Maximum Collector-Emitter Voltage60 V
Number of terminals2
Processing package descriptionTO-3, 2 PIN
each_compliYes
stateActive
Shell connectionCOLLECTOR
structureSINGLE
Minimum DC amplification factor20
jedec_95_codeTO-3
jesd_30_codeO-MBFM-P2
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature200 Cel
Packaging MaterialsMETAL
packaging shapeROUND
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typePNP
wer_dissipation_max__abs_125 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency4 MHz
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
・High
gain at high current
APPLICATIONS
・General-purpose
types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6246 2N6247 2N6248
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6246
V
CBO
Collector-base voltage
2N6247
2N6248
2N6246
V
CEO
Collector-emitter voltage
2N6247
2N6248
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
70
90
110
60
80
100
5
15
5
125
150
-65~200
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.4
UNIT
℃/W
JMnic

2N6247 Related Products

2N6247 2N6246 2N6248 2N6246_15
Description 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
Maximum collector current 15 A 15 A 10 A 15 A
Maximum Collector-Emitter Voltage 60 V 60 V 100 V 60 V
Number of terminals 2 2 2 2
Processing package description TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN
state Active Active ACTIVE Active
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
structure SINGLE SINGLE single SINGLE
Minimum DC amplification factor 20 20 20 20
Number of components 1 1 1 1
Packaging Materials METAL METAL Metal METAL
packaging shape ROUND ROUND round ROUND
Package Size FLANGE MOUNT FLANGE MOUNT Flange mounting FLANGE MOUNT
terminal coating TIN LEAD TIN LEAD tin lead TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON silicon SILICON
Rated crossover frequency 4 MHz 4 MHz 4 MHz 4 MHz
each_compli Yes Yes - Yes
jedec_95_code TO-3 TO-3 - TO-3
jesd_30_code O-MBFM-P2 O-MBFM-P2 - O-MBFM-P2
jesd_609_code e0 e0 - e0
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum operating temperature 200 Cel 200 Cel - 200 Cel
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
larity_channel_type PNP PNP - PNP
wer_dissipation_max__abs_ 125 W 125 W - 125 W
qualification_status COMMERCIAL COMMERCIAL - COMMERCIAL
sub_category Other Transistors Other Transistors - Other Transistors
surface mount NO NO - NO
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING
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