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2SD1608

Description
isc Silicon NPN Darlington Power Transistor
File Size78KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD1608 Overview

isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1608
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 120V(Min)
·High
DC Current Gain
: h
FE
= 1000(Min) @I
C
= 4A
·High
Speed Switching
APPLICATIONS
·Designed
for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
8
A
I
CP
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
12
A
2
W
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
50
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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