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2SD2029

Description
Silicon NPN Power Transistors
File Size64KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD2029 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2029
DESCRIPTION
・With
TO-3PL package
・Complement
to type 2SB1347
・Wide
area of safe operation
・High
transition frequency
APPLICATIONS
・Optimum
for the output stage of a
Hi-Fi audio amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
120
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
160
160
5
12
20
3.5
W
UNIT
V
V
V
A
A
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