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2SD2384

Description
isc Silicon NPN Darlington Power Transistor
File Size81KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD2384 Overview

isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD2384
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 140V(Min)
·High
DC Current Gain-
: h
FE
= 5000(Min)@I
C
= 6A
·Complement
to Type 2SB1555
APPLICATIONS
·Designed
for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
140
V
V
CEO
Collector-Emitter Voltage
140
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
7
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
0.1
A
P
C
100
W
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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