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2SD2560

Description
15 A, 150 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size44KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric View All

2SD2560 Overview

15 A, 150 V, NPN, Si, POWER TRANSISTOR

2SD2560 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current15 A
Maximum Collector-Emitter Voltage150 V
Processing package descriptionMT100, TO-3P, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON WITH BUILT-IN RESISTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor5000
Rated crossover frequency70 MHz
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SB1647
APPLICATIONS
・Audio
,regulator and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
15
1
130
150
-55~150
UNIT
V
V
V
A
A
W
Earn points, let me sink~~~
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