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AM4919P

Description
P-Channel 20-V (D-S) MOSFET
File Size201KB,5 Pages
ManufacturerAnalog Power
Websitehttp://www.analogpowerinc.com/index.html
Download Datasheet View All

AM4919P Overview

P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
AM4919P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
21 @ V
GS
= -4.5V
-20
35 @ V
GS
= -2.5V
57 @ V
GS
= -1.8V
1
2
3
4
I
D
(A)
8.2
6.4
5.0
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
V
DS
-20
Drain-Source Voltage
V
V
GS
±12
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
8.2
6.5
±30
-2.3
2.1
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
Maximum
62.5
110
Units
o
o
t <= 10 sec
Steady-State
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4919_F
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