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BAV21W

Description
0.2 A, 250 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size152KB,2 Pages
ManufacturerFCI [First Components International]
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BAV21W Overview

0.2 A, 250 V, SILICON, SIGNAL DIODE

BAV19~21W
Description
Mechanical Dimensions
INCHES
MM
DIM
A
B
C
D
E
F
G
H
MIN
0.055
0.100
0.037
0.020
0.004
0.000
MAX MIN MAX
0.071
1.40 1.80
0.112
2.55 2.85
0.053
0.95 1.35
0.028
0.50 0.70
0.25
0.004 0.00 0.10
0.006
0.15
3.85
0.140 0.152
3.55
SOD-123
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
I
FRM
Pd
Junction
to
R
θJA
T
STG
71
106
400
200
2.5
0.5
625
250
500
-65~+150
100
150
BAV19W
120
BAV20W
200
MARKING: BAV19W: A8
BAV20W: T2
BAV21W: T3
BAV21W
250
Unit
V
200
V
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0ms
@=1.0s
Repetitive Peak Forward Current
Power Dissipation
Thermal
Ambient
Storage temperature
Resistance
141
V
mA
mA
A
mA
mW
K/W
Electrical Ratings @T
A
=25℃
Parameter
Symbol
V
F1
V
F2
Reverse current
BAV19W
BAV20W
BAV21W
Capacitance between terminals
Reverse Recovery Time
C
T
t
rr
I
R
Min.
Typ.
Max.
1.0
1.25
0.1
0.1
0.1
5
50
pF
ns
µA
V
Unit
Conditions
I
F
=0.1A
I
F
=0.2A
V
R
=100V
V
R
=150V
V
R
=200V
V
R
=0V,f=1MHz
I
F
=I
R
=30mA
Irr=0.1XI
R
,R
L
=100Ω
Forward voltage

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Description 0.2 A, 250 V, SILICON, SIGNAL DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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